sop8 plastic-encapsulate mosfets CJQ4435 p-channel mosfet applications ? load switches ? battery switch maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current (t = 10s ) (note 1) i d -9.1 pulsed drain current i dm -50 drain-source diode forward current (t = 10s ) (note 1) i s -2 a power dissipation (t = 10s ) p d 1.4 w thermal resistance from junction to ambient (t 10s ) (note 1) r ja 89 /w junction temperature t j 150 storage temperature t stg -55 ~+150 sop8 1 of 3 sales@zpsemi.com www.zpsemi.com CJQ4435
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain source breakdown voltage v (br)dss v gs =0v,i d =-250a -30 v zero gate voltage drain current i dss v ds =-30v, v gs =0v -1 a gate body leakage l gss v ds =0v, v gs =20v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -3 v v gs =-10v, i d =-9.1a 24 drain-source on-state resistance (note 2) r ds(on ) v gs =-4.5v, i d =-6.9a 35 m ? forward transconductance (note 2) g fs v ds =-10v, i d =-9.1a 20 s dynamic characteristics (note 3) input capacitance c iss 1350 output capacitance c oss 215 reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 185 pf v ds =-15v,v gs =-10v,i d =-9.1a 50 total gate charge q g 25 gate-source charge q gs 4 gate-drain charge q gd v ds =-15v,v gs =-4.5v,i d =-9.1a 7.5 nc gate resistance r g f =1mhz 5.8 ? turn-on delay time t d (on) 15 rise time t r 15 turn-off delay time t d(off) 70 fall time t f v dd =-15v,r l =15 ? i d =-1a,v gen =-10v,r g =1 ? 25 ns drain-source body diode characteristics diode forward voltage v sd i s =-2a,v gs =0v -1.2 v notes: 1. surface mounted on 1?1? fr4 board. 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not s ubject to production testing. 2 of 3 sales@zpsemi.com www.zpsemi.com CJQ4435
-0 -2 -4 -6 -8 -10 0 20 40 60 80 25 50 75 100 125 -1.2 -1.3 -1.4 -1.5 -1.6 -0 -2 -4 -6 -8 -10 -0 -6 -12 -18 -24 -0 -2 -4 -6 -8 -10 0 20 40 60 80 -0.2 -0.4 -0.6 -0.8 -1.0 -1e-3 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -0 -6 -12 -18 -24 v gs =-4.5v v gs =-10v i d ?? r ds(on) ta=25 pulsed on-resistance r ds(on) (m ) drain current i d (a) threshold voltage i d =-250ua threshold voltage v th (v) junction temperature t j ( ) v gs =-2.5v v gs =-3v,-3.5v,-4v,-4.5v v gs =-2v ta=25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =-9.1a ta=25 pulsed v gs ?? r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) -2 v sd i s ?? ta=25 pulsed source current i s (a) source to drain voltage v sd (v) v ds =-10v ta=25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) 3 of 3 sales@zpsemi.com www.zpsemi.com CJQ4435 b,dec,2011
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